STP95N04

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

50ns

JESD-30 Code :

R-PSFM-T3

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Turn On Delay Time :

15 ns

Package / Case :

TO-220-3

Base Part Number :

STP95

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Continuous Drain Current (ID) :

80A

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 10V

Current Rating :

80A

Terminal Finish :

Tin (Sn)

Drain-source On Resistance-Max :

0.0065ohm

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 40A, 10V

Power Dissipation :

110W

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tube

Voltage - Rated DC :

40V

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

15 ns

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

400 mJ

Series :

STripFET™

Pulsed Drain Current-Max (IDM) :

320A

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Mount :

Through Hole

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Case Connection :

DRAIN

Power Dissipation-Max :

110W Tc

Turn-Off Delay Time :

40 ns

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

Pbfree Code :

yes

Number of Elements :

1

Element Configuration :

Single

Drain to Source Breakdown Voltage :

40V