STP90N4F3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

110W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 40A, 10V

Package / Case :

TO-220-3

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

80A

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Terminal Position :

Single

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

40V

Drain-source On Resistance-Max :

0.0062Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Surface Mount :

No

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 10V

DS Breakdown Voltage-Min :

40V

Avalanche Energy Rating (Eas) :

400 mJ

Pulsed Drain Current-Max (IDM) :

320A

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Base Part Number :

STP90N

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

80A Tc

JESD-30 Code :

R-PSFM-T3

Qualification Status :

Not Qualified

JEDEC-95 Code :

TO-220AB

FET Type :

N-Channel

Series :

STripFET™ III