STP95N2LH5
- Mfr.Part #
- STP95N2LH5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 80A TO220AB
- Stock
- 32,400
- In Stock :
- 32,400
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Drain Current-Max (Abs) (ID) :
- 95A
- Package / Case :
- TO-220-3
- Continuous Drain Current (ID) :
- 80A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pbfree Code :
- yes
- Drain to Source Voltage (Vdss) :
- 25V
- Rds On (Max) @ Id, Vgs :
- 4.9m Ω @ 40A, 10V
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~175°C TJ
- Pin Count :
- 3
- Power Dissipation-Max :
- 80W Tc
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 13.4nC @ 5V
- Case Connection :
- DRAIN
- Number of Terminations :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Terminal Finish :
- Matte Tin (Sn)
- Reach Compliance Code :
- not_compliant
- Base Part Number :
- STP95
- DS Breakdown Voltage-Min :
- 25V
- Avalanche Energy Rating (Eas) :
- 165 mJ
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 1817pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- JEDEC-95 Code :
- TO-220AB
- FET Type :
- N-Channel
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- Number of Pins :
- 3
- Vgs (Max) :
- ±22V
- Mount :
- Through Hole
- Terminal Position :
- Single
- Drain-source On Resistance-Max :
- 0.007Ohm
- Series :
- STripFET™ V
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Datasheets
- STP95N2LH5

N-Channel Tube 4.9m Ω @ 40A, 10V ±22V 1817pF @ 25V 13.4nC @ 5V 25V TO-220-3
STP95N2LH5 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 165 mJ.The maximum input capacitance of this device is 1817pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 80A.As shown in the table below, the drain current of this device is 95A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 25V.The drain-to-source voltage (Vdss) of this transistor needs to be at 25V in order to operate.Using drive voltage (5V 10V), this device helps reduce its power consumption.
STP95N2LH5 Features
the avalanche energy rating (Eas) is 165 mJ
a continuous drain current (ID) of 80A
a 25V drain to source voltage (Vdss)
STP95N2LH5 Applications
There are a lot of STMicroelectronics
STP95N2LH5 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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