STP9NK50Z

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

500V

Threshold Voltage :

3.75V

Length :

10.4mm

Transistor Element Material :

SILICON

Voltage - Rated DC :

500V

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Vgs (Max) :

±30V

ECCN Code :

EAR99

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

Lead Free :

Lead Free

Power Dissipation-Max :

110W Tc

Package / Case :

TO-220-3

Rise Time :

20ns

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Current Rating :

7.2A

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

7.2A

Base Part Number :

STP9N

Number of Pins :

3

Gate to Source Voltage (Vgs) :

30V

Terminal Finish :

Matte Tin (Sn)

Turn-Off Delay Time :

45 ns

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

850m Ω @ 3.6A, 10V

Series :

SuperMESH™

Pin Count :

3

Height :

9.15mm

Current - Continuous Drain (Id) @ 25°C :

7.2A Tc

Resistance :

850mOhm

Vgs(th) (Max) @ Id :

4.5V @ 100μA

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

910pF @ 25V

Width :

4.6mm

Number of Terminations :

3

Radiation Hardening :

No

Power Dissipation :

110W

Turn On Delay Time :

17 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Fall Time (Typ) :

22 ns

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

28.8A

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

12 Weeks

FET Type :

N-Channel

Number of Elements :

1

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V