STP9NK70Z
- Mfr.Part #
- STP9NK70Z
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 700V 7.5A TO220AB
- Stock
- 63,080
- In Stock :
- 63,080
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 10.4mm
- Lifecycle Status :
- NRND (Last Updated: 8 months ago)
- Gate Charge (Qg) (Max) @ Vgs :
- 68nC @ 10V
- Turn-Off Delay Time :
- 45 ns
- Threshold Voltage :
- 3.75V
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs(th) (Max) @ Id :
- 4.5V @ 100μA
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 7.5A
- Current - Continuous Drain (Id) @ 25°C :
- 7.5A Tc
- Voltage - Rated DC :
- 700V
- Rds On (Max) @ Id, Vgs :
- 1.2 Ω @ 4A, 10V
- REACH SVHC :
- No SVHC
- Mounting Type :
- Through Hole
- Continuous Drain Current (ID) :
- 4A
- Height :
- 16.4mm
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Series :
- SuperMESH™
- JEDEC-95 Code :
- TO-220AB
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Through Hole
- Fall Time (Typ) :
- 13 ns
- Power Dissipation-Max :
- 115W Tc
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1370pF @ 25V
- Vgs (Max) :
- ±30V
- Rise Time :
- 17ns
- Number of Terminations :
- 3
- Package / Case :
- TO-220-3
- Terminal Finish :
- Matte Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Pin Count :
- 3
- Power Dissipation :
- 115W
- Drain to Source Breakdown Voltage :
- 700V
- Base Part Number :
- STP9N
- Number of Pins :
- 3
- Width :
- 4.6mm
- Radiation Hardening :
- No
- Turn On Delay Time :
- 22 ns
- Lead Free :
- Lead Free
- Datasheets
- STP9NK70Z

N-Channel Tube 1.2 Ω @ 4A, 10V ±30V 1370pF @ 25V 68nC @ 10V TO-220-3
STP9NK70Z Description
The SuperMESHTM series is the result of a thorough optimization of ST's well-known strip-based PowerMESHTM structure. In addition to lowering on-resistance, special attention is paid to ensuring excellent dv/dt capability for the most demanding applications. ST's comprehensive portfolio of high-voltage MOSFETs, including the innovative MDmeshTM devices, is complemented by this series.
STP9NK70Z Features
-
100% Avalanche rated
-
Gate charge minimized
-
Typical RDS(on) = 1.0 ?
-
Improved ESD Capability
-
Very low intrinsic capacitances
-
Extremely high dv/dt Capability
-
Very good manufacturing repeatability
STP9NK70Z Applications
-
High current, high-speed switching
-
Ideal for off-line power supplies, adaptors, and PFC
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