STP9NK65ZFP

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

Isolated

Number of Pins :

3

ECCN Code :

EAR99

Turn-Off Delay Time :

45 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Packaging :

Tube

Turn On Delay Time :

20 ns

Drain to Source Breakdown Voltage :

650V

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 3.2A, 10V

Package / Case :

TO-220-3 Full Pack

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Series :

SuperMESH™

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Element Configuration :

Single

Rise Time :

12ns

Terminal Finish :

Matte Tin (Sn)

Power Dissipation-Max :

30W Tc

JESD-609 Code :

e3

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

6.4A

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1145pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

6.4A Tc

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

25.6A

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Number of Elements :

1

Power Dissipation :

30W

Vgs (Max) :

±30V

Mount :

Through Hole

Number of Terminations :

3

Pin Count :

3

Avalanche Energy Rating (Eas) :

200 mJ

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

30V

Fall Time (Typ) :

15 ns

Mounting Type :

Through Hole

Base Part Number :

STP9N