STP9NK65Z

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Package / Case :

TO-220-3

Avalanche Energy Rating (Eas) :

200 mJ

Series :

SuperMESH™

Factory Lead Time :

12 Weeks

Gate to Source Voltage (Vgs) :

30V

Rise Time :

12ns

Turn On Delay Time :

20 ns

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Pulsed Drain Current-Max (IDM) :

25.6A

FET Type :

N-Channel

Voltage - Rated DC :

650V

Number of Elements :

1

Power Dissipation-Max :

125W Tc

Transistor Application :

SWITCHING

Fall Time (Typ) :

15 ns

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

650V

Transistor Element Material :

SILICON

Number of Terminations :

3

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSFM-T3

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

6.4A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

125W

ECCN Code :

EAR99

Element Configuration :

Single

Current Rating :

6.4A

Terminal Finish :

Matte Tin (Sn)

Base Part Number :

STP9N

Packaging :

Tube

Turn-Off Delay Time :

45 ns

Current - Continuous Drain (Id) @ 25°C :

6.4A Tc

JESD-609 Code :

e3

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 3.2A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1145pF @ 25V

Operating Mode :

ENHANCEMENT MODE