STP6NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Resistance :

920mOhm

JEDEC-95 Code :

TO-220AB

Packaging :

Tube

Drain to Source Breakdown Voltage :

600V

Base Part Number :

STP6N

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3

Input Capacitance (Ciss) (Max) @ Vds :

420pF @ 50V

Transistor Application :

SWITCHING

Power Dissipation-Max :

45W Tc

Rds On (Max) @ Id, Vgs :

920m Ω @ 2.3A, 10V

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

45W

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Series :

MDmesh™ II

JESD-609 Code :

e3

Turn-Off Delay Time :

40 ns

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Gate to Source Voltage (Vgs) :

25V

Current - Continuous Drain (Id) @ 25°C :

4.6A Tc

Fall Time (Typ) :

9 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Radiation Hardening :

No

JESD-30 Code :

R-PSFM-T3

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

4.6A

Vgs (Max) :

±25V

Element Configuration :

Single

Number of Terminations :

3

Number of Elements :

1

Avalanche Energy Rating (Eas) :

65 mJ

Rise Time :

8ns