STP60N55F3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 32A, 10V

Transistor Application :

SWITCHING

Power Dissipation-Max :

110W Tc

Drain to Source Breakdown Voltage :

55V

ECCN Code :

EAR99

Case Connection :

DRAIN

JEDEC-95 Code :

TO-220AB

Rise Time :

50ns

Turn On Delay Time :

20 ns

Element Configuration :

Single

Power Dissipation :

110W

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

FET Type :

N-Channel

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

STP60N

Gate to Source Voltage (Vgs) :

20V

Width :

4.6mm

Continuous Drain Current (ID) :

80A

Height :

9.15mm

Terminal Finish :

Matte Tin (Sn)

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

Radiation Hardening :

No

Packaging :

Tube

Package / Case :

TO-220-3

Transistor Element Material :

SILICON

Series :

STripFET™ III

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Number of Pins :

3

Vgs (Max) :

±20V

Length :

10.4mm

Turn-Off Delay Time :

35 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Fall Time (Typ) :

11.5 ns

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Resistance :

8.5mOhm

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V