STP60NF06L

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

1V @ 250μA

Voltage - Rated DC :

60V

Height :

9.15mm

Continuous Drain Current (ID) :

60A

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

60V

Power Dissipation :

110W

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

Mount :

Through Hole

Transistor Application :

SWITCHING

Number of Terminations :

3

Fall Time (Typ) :

30 ns

Series :

STripFET™ II

Drive Voltage (Max Rds On,Min Rds On) :

10V 5V

Package / Case :

TO-220-3

Packaging :

Tube

Additional Feature :

LOW THRESHOLD, AVALANCHE RATED

Vgs (Max) :

±15V

Gate to Source Voltage (Vgs) :

15V

Case Connection :

DRAIN

Weight :

9.071847g

Turn On Delay Time :

35 ns

Element Configuration :

Single

FET Type :

N-Channel

Threshold Voltage :

1V

Operating Temperature :

-65°C~175°C TJ

Rise Time :

220ns

Radiation Hardening :

No

Power Dissipation-Max :

110W Tc

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Width :

4.6mm

Mounting Type :

Through Hole

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

240A

Current Rating :

60A

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

JESD-609 Code :

e3

Base Part Number :

STP60N

ECCN Code :

EAR99

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn)

Rds On (Max) @ Id, Vgs :

14m Ω @ 30A, 10V

Number of Pins :

3

Length :

10.4mm

Factory Lead Time :

12 Weeks

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Turn-Off Delay Time :

55 ns

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 4.5V

Resistance :

14mOhm

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 25V