STP65NF06

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Base Part Number :

STP65N

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

12 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

240A

Number of Terminations :

3

Drain-source On Resistance-Max :

0.014Ohm

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

110W Tc

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

390 mJ

DS Breakdown Voltage-Min :

60V

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 25V

Rds On (Max) @ Id, Vgs :

14m Ω @ 30A, 10V

Series :

STripFET™ II

Case Connection :

DRAIN

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

No

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSFM-T3

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Pin Count :

3

Package / Case :

TO-220-3

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

60A

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

60V

Packaging :

Tube

ECCN Code :

EAR99

Reach Compliance Code :

not_compliant