STP60NE06-16

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

150 ns

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Avalanche Energy Rating (Eas) :

350 mJ

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Turn On Delay Time :

40 ns

Input Capacitance (Ciss) (Max) @ Vds :

6200pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

60A

Radiation Hardening :

No

Number of Elements :

1

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.016Ohm

Current Rating :

60A

Base Part Number :

STP60N

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

150W Tc

Pulsed Drain Current-Max (IDM) :

240A

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Packaging :

Tube

Element Configuration :

Single

Lead Free :

Lead Free

JEDEC-95 Code :

TO-220AB

Rds On (Max) @ Id, Vgs :

16m Ω @ 30A, 10V

Mounting Type :

Through Hole

Voltage - Rated DC :

60V

Mount :

Through Hole

Rise Time :

125ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Pin Count :

3

Operating Temperature :

175°C TJ

Power Dissipation :

150W

Drain to Source Breakdown Voltage :

60V

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3