STP6NB90

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Base Part Number :

STP6N

Voltage - Rated DC :

900V

Terminal Finish :

Tin/Lead (Sn/Pb)

Drain-source On Resistance-Max :

2Ohm

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

5V @ 250μA

Turn On Delay Time :

20 ns

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Through Hole

Current Rating :

5.8A

Pulsed Drain Current-Max (IDM) :

23A

Additional Feature :

High Voltage

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Series :

PowerMESH™

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

Rise Time :

10ns

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

135W

Fall Time (Typ) :

15 ns

Rds On (Max) @ Id, Vgs :

2 Ω @ 3A, 10V

Pin Count :

3

JESD-609 Code :

e0

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

135W Tc

Package / Case :

TO-220-3

Element Configuration :

Single

Number of Terminations :

3

Drain to Source Breakdown Voltage :

900V

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

250 mJ

FET Type :

N-Channel

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

5.8A

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSFM-T3

Mount :

Through Hole

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

5.8A Tc

JEDEC-95 Code :

TO-220AB