STP6N80K5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Base Part Number :

STP6N

Vgs (Max) :

30V

FET Type :

N-Channel

Series :

SuperMESH5™

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 10V

Transistor Element Material :

SILICON

Packaging :

Tube

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

800V

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Avalanche Energy Rating (Eas) :

85 mJ

Mounting Type :

Through Hole

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

DS Breakdown Voltage-Min :

800V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

4.5A

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

85W Tc

Vgs(th) (Max) @ Id :

5V @ 100µA

Transistor Application :

SWITCHING

Factory Lead Time :

17 Weeks

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 2A, 10V

JESD-30 Code :

R-PSFM-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

Case Connection :

DRAIN

Package / Case :

TO-220-3

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

18A

Input Capacitance (Ciss) (Max) @ Vds :

255pF @ 100V