STP6N65M2
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- Mfr.Part #
- STP6N65M2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 4A TO220
- Stock
- 1,665
- In Stock ：
- 1,665
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 60W Tc
- Drain to Source Breakdown Voltage :
- 650V
- Series :
- MDmesh™
- Weight :
- 329.988449mg
- Package / Case :
- TO-220-3
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Packaging :
- Tube
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Factory Lead Time :
- 16 Weeks
- Threshold Voltage :
- 3V
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 25V
- Number of Pins :
- 3
- Base Part Number :
- STP6N
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rise Time :
- 7ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 226pF @ 100V
- Continuous Drain Current (ID) :
- 4A
- REACH SVHC :
- No SVHC
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Vgs (Max) :
- ±25V
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Number of Channels :
- 1
- Fall Time (Typ) :
- 20 ns
- Turn On Delay Time :
- 19 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 9.8nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 1.35 Ω @ 2A, 10V
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 6.5 ns
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- STP6N65M2
N-Channel Tube 1.35 Ω @ 2A, 10V ±25V 226pF @ 100V 9.8nC @ 10V TO-220-3
STP6N65M2 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 226pF @ 100V.This device conducts a continuous drain current (ID) of 4A, which is the maximum continuous current transistor can conduct.Using VGS=650V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 650V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 6.5 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 19 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 25V.Activation of any electrical operation happens at threshold voltage, and this transistor has 3V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STP6N65M2 Features
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 6.5 ns
a threshold voltage of 3V
STP6N65M2 Applications
There are a lot of STMicroelectronics
STP6N65M2 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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