STN851
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- Mfr.Part #
- STN851
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 5A SOT223
- Stock
- 309
- In Stock ：
- 309
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 5A
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 5A
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 7V
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Max Collector Current :
- 5A
- Power Dissipation :
- 1.6W
- Factory Lead Time :
- 8 Weeks
- Max Power Dissipation :
- 1.6W
- JESD-30 Code :
- R-PDSO-G4
- Length :
- 6.5mm
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 2A 1V
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Packaging :
- Cut Tape (CT)
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- 320mV
- Height :
- 1.8mm
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Width :
- 3.5mm
- Package / Case :
- TO-261-4, TO-261AA
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Max Breakdown Voltage :
- 60V
- Terminal Form :
- Gull wing
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- Case Connection :
- COLLECTOR
- REACH SVHC :
- No SVHC
- Gain Bandwidth Product :
- 130MHz
- Number of Terminations :
- 4
- Collector Emitter Voltage (VCEO) :
- 60V
- Voltage - Rated DC :
- 60V
- JESD-609 Code :
- e3
- Transition Frequency :
- 130MHz
- Collector Base Voltage (VCBO) :
- 150V
- hFE Min :
- 150
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Number of Elements :
- 1
- Pin Count :
- 4
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 130MHz
- Base Part Number :
- STN851
- Datasheets
- STN851
NPN 150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
STN851 Overview
This device has a DC current gain of 150 @ 2A 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 320mV.A VCE saturation (Max) of 500mV @ 200mA, 5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.This device has a current rating of 5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 130MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 5A volts is possible.
STN851 Features
the DC current gain for this device is 150 @ 2A 1V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 500mV @ 200mA, 5A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
a transition frequency of 130MHz
STN851 Applications
There are a lot of STMicroelectronics
STN851 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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