STN851
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- Mfr.Part #
- STN851
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 5A SOT223
- Stock
- 309
- In Stock ：
- 309
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Voltage - Rated DC :
- 60V
- Pin Count :
- 4
- Power Dissipation :
- 1.6W
- Gain Bandwidth Product :
- 130MHz
- Max Power Dissipation :
- 1.6W
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 2A 1V
- Element Configuration :
- Single
- Width :
- 3.5mm
- Transition Frequency :
- 130MHz
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- ECCN Code :
- EAR99
- Length :
- 6.5mm
- Height :
- 1.8mm
- Max Breakdown Voltage :
- 60V
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Current Rating :
- 5A
- Collector Emitter Breakdown Voltage :
- 60V
- Emitter Base Voltage (VEBO) :
- 7V
- Max Collector Current :
- 5A
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 150
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- JESD-30 Code :
- R-PDSO-G4
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 60V
- Base Part Number :
- STN851
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 5A
- Frequency :
- 130MHz
- Number of Terminations :
- 4
- Case Connection :
- COLLECTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Package / Case :
- TO-261-4, TO-261AA
- Collector Base Voltage (VCBO) :
- 150V
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Saturation Voltage :
- 320mV
- Packaging :
- Cut Tape (CT)
- Datasheets
- STN851
NPN 150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
STN851 Overview
This device has a DC current gain of 150 @ 2A 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 320mV.A VCE saturation (Max) of 500mV @ 200mA, 5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.This device has a current rating of 5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 130MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 5A volts is possible.
STN851 Features
the DC current gain for this device is 150 @ 2A 1V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 500mV @ 200mA, 5A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
a transition frequency of 130MHz
STN851 Applications
There are a lot of STMicroelectronics
STN851 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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