STN851
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- Mfr.Part #
- STN851
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 5A SOT223
- Stock
- 309
- In Stock ：
- 309
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Collector Emitter Saturation Voltage :
- 320mV
- Package / Case :
- TO-261-4, TO-261AA
- Length :
- 6.5mm
- Number of Terminations :
- 4
- Base Part Number :
- STN851
- Terminal Position :
- Dual
- Case Connection :
- COLLECTOR
- Power Dissipation :
- 1.6W
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 150
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 150V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 2A 1V
- Max Power Dissipation :
- 1.6W
- Max Breakdown Voltage :
- 60V
- Packaging :
- Cut Tape (CT)
- Width :
- 3.5mm
- Emitter Base Voltage (VEBO) :
- 7V
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Current Rating :
- 5A
- Transistor Type :
- NPN
- Factory Lead Time :
- 8 Weeks
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 4
- Height :
- 1.8mm
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Voltage - Rated DC :
- 60V
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 130MHz
- JESD-30 Code :
- R-PDSO-G4
- Lead Free :
- Lead Free
- Frequency :
- 130MHz
- Collector Emitter Voltage (VCEO) :
- 60V
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- Max Collector Current :
- 5A
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 130MHz
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Collector Emitter Breakdown Voltage :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 5A
- Datasheets
- STN851
NPN 150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
STN851 Overview
This device has a DC current gain of 150 @ 2A 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 320mV.A VCE saturation (Max) of 500mV @ 200mA, 5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.This device has a current rating of 5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 130MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 5A volts is possible.
STN851 Features
the DC current gain for this device is 150 @ 2A 1V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 500mV @ 200mA, 5A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
a transition frequency of 130MHz
STN851 Applications
There are a lot of STMicroelectronics
STN851 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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