STN83003
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- Mfr.Part #
- STN83003
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 400V 1.5A SOT223
- Stock
- 55
- In Stock ：
- 55
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 1mA
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 2 weeks ago)
- Terminal Finish :
- MATTE TIN
- Pin Count :
- 4
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 16 @ 350mA 5V
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 500mA
- Emitter Base Voltage (VEBO) :
- 12V
- Case Connection :
- COLLECTOR
- REACH SVHC :
- No SVHC
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 400V
- Package / Case :
- TO-261-4, TO-261AA
- Factory Lead Time :
- 8 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 1.8mm
- Length :
- 6.5mm
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Application :
- SWITCHING
- Packaging :
- Cut Tape (CT)
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Base Part Number :
- STN83
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 3.5mm
- Collector Emitter Saturation Voltage :
- 1V
- JESD-30 Code :
- R-PDSO-G4
- Number of Terminations :
- 4
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 400V
- Transistor Type :
- NPN
- Max Power Dissipation :
- 1.6W
- Max Breakdown Voltage :
- 400V
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Power Dissipation :
- 1.6W
- Max Collector Current :
- 1.5A
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Datasheets
- STN83003
NPN 150°C TJ 1mA 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
STN83003 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 16 @ 350mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 12V.Single BJT transistor can take a breakdown input voltage of 400V volts.During maximum operation, collector current can be as low as 1.5A volts.
STN83003 Features
the DC current gain for this device is 16 @ 350mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 500mV @ 100mA, 500mA
the emitter base voltage is kept at 12V
STN83003 Applications
There are a lot of STMicroelectronics
STN83003 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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