STN817A
- Mfr.Part #
- STN817A
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 80V 1.5A SOT223
- Stock
- 11,886
- In Stock :
- 11,886
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 500mV
- Polarity/Channel Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 80V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- JESD-30 Code :
- R-PDSO-G4
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Power Dissipation :
- 1.6W
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- PNP
- Width :
- 3.5mm
- Case Connection :
- COLLECTOR
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 80V
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 4
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 50MHz
- Frequency :
- 50MHz
- Collector Base Voltage (VCBO) :
- 80V
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Reach Compliance Code :
- not_compliant
- Pin Count :
- 4
- Length :
- 6.5mm
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Termination :
- SMD/SMT
- Height :
- 1.8mm
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Operating Temperature :
- -65°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 1A 2V
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 80V
- Base Part Number :
- STN817
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 1.5A
- Current - Collector Cutoff (Max) :
- 1mA
- Package / Case :
- TO-261-4, TO-261AA
- Transition Frequency :
- 50MHz
- Qualification Status :
- Not Qualified
- Mounting Type :
- Surface Mount
- hFE Min :
- 140
- Max Power Dissipation :
- 1.6W
- Datasheets
- STN817A

PNP -65°C~150°C TJ 1mA 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
STN817A Overview
This device has a DC current gain of 30 @ 1A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 1.5A volts is possible.
STN817A Features
the DC current gain for this device is 30 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 50MHz
STN817A Applications
There are a lot of STMicroelectronics
STN817A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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