STN888
- Mfr.Part #
- STN888
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 30V 5A SOT223
- Stock
- 2,158
- In Stock :
- 2,158
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Package / Case :
- TO-261-4, TO-261AA
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Base Part Number :
- STN888
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 500mA, 10A
- Case Connection :
- COLLECTOR
- Number of Pins :
- 3
- Reach Compliance Code :
- not_compliant
- Terminal Form :
- Gull wing
- Pin Count :
- 4
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 1V
- Transistor Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 30V
- Collector Base Voltage (VCBO) :
- 45V
- Collector Emitter Voltage (VCEO) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 3.5mm
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 5A
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- PNP
- JESD-30 Code :
- R-PDSO-G4
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Max Power Dissipation :
- 1.6W
- Continuous Collector Current :
- 5A
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Position :
- Dual
- Number of Terminations :
- 4
- Transistor Application :
- SWITCHING
- Height :
- 1.8mm
- Length :
- 6.5mm
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Termination :
- SMD/SMT
- Collector Emitter Saturation Voltage :
- 1.2V
- hFE Min :
- 120
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Collector Emitter Breakdown Voltage :
- 30V
- Power Dissipation :
- 1.6W
- Datasheets
- STN888

PNP 150°C TJ 10μA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
STN888 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.2V @ 500mA, 10A.Continuous collector voltages of 5A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 5A volts.
STN888 Features
the DC current gain for this device is 100 @ 500mA 1V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 500mA, 10A
the emitter base voltage is kept at 6V
STN888 Applications
There are a lot of STMicroelectronics
STN888 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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