STN888
- Mfr.Part #
- STN888
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 30V 5A SOT223
- Stock
- 2,158
- In Stock :
- 2,158
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Transistor Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- 1.2V
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Position :
- Dual
- Continuous Collector Current :
- 5A
- JESD-30 Code :
- R-PDSO-G4
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 500mA, 10A
- Package / Case :
- TO-261-4, TO-261AA
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 1V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 1.6W
- Collector Base Voltage (VCBO) :
- 45V
- JESD-609 Code :
- e3
- Width :
- 3.5mm
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 30V
- Collector Emitter Breakdown Voltage :
- 30V
- Terminal Form :
- Gull wing
- Operating Temperature :
- 150°C TJ
- Length :
- 6.5mm
- REACH SVHC :
- No SVHC
- Case Connection :
- COLLECTOR
- Max Collector Current :
- 5A
- Height :
- 1.8mm
- Emitter Base Voltage (VEBO) :
- 6V
- Termination :
- SMD/SMT
- hFE Min :
- 120
- Reach Compliance Code :
- not_compliant
- ECCN Code :
- EAR99
- Base Part Number :
- STN888
- Max Power Dissipation :
- 1.6W
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Pin Count :
- 4
- Qualification Status :
- Not Qualified
- Number of Pins :
- 3
- Number of Terminations :
- 4
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 30V
- Transistor Application :
- SWITCHING
- Datasheets
- STN888

PNP 150°C TJ 10μA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
STN888 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.2V @ 500mA, 10A.Continuous collector voltages of 5A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 5A volts.
STN888 Features
the DC current gain for this device is 100 @ 500mA 1V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 500mA, 10A
the emitter base voltage is kept at 6V
STN888 Applications
There are a lot of STMicroelectronics
STN888 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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