STN888
- Mfr.Part #
- STN888
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 30V 5A SOT223
- Stock
- 2,158
- In Stock :
- 2,158
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Qualification Status :
- Not Qualified
- Max Collector Current :
- 5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Continuous Collector Current :
- 5A
- Package / Case :
- TO-261-4, TO-261AA
- Height :
- 1.8mm
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Transistor Type :
- PNP
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 1.6W
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 1V
- Pin Count :
- 4
- ECCN Code :
- EAR99
- Length :
- 6.5mm
- Number of Terminations :
- 4
- Max Power Dissipation :
- 1.6W
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 500mA, 10A
- hFE Min :
- 120
- Emitter Base Voltage (VEBO) :
- 6V
- JESD-30 Code :
- R-PDSO-G4
- Terminal Form :
- Gull wing
- Width :
- 3.5mm
- Termination :
- SMD/SMT
- Base Part Number :
- STN888
- Pbfree Code :
- yes
- Max Breakdown Voltage :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 45V
- Terminal Position :
- Dual
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- 1.2V
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 30V
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- not_compliant
- Polarity/Channel Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Datasheets
- STN888

PNP 150°C TJ 10μA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
STN888 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.2V @ 500mA, 10A.Continuous collector voltages of 5A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 5A volts.
STN888 Features
the DC current gain for this device is 100 @ 500mA 1V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 500mA, 10A
the emitter base voltage is kept at 6V
STN888 Applications
There are a lot of STMicroelectronics
STN888 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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