STN888
- Mfr.Part #
- STN888
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 30V 5A SOT223
- Stock
- 2,158
- In Stock :
- 2,158
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Termination :
- SMD/SMT
- Collector Emitter Voltage (VCEO) :
- 30V
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- JESD-609 Code :
- e3
- hFE Min :
- 120
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 30V
- Terminal Position :
- Dual
- Number of Terminations :
- 4
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Base Part Number :
- STN888
- Reach Compliance Code :
- not_compliant
- JESD-30 Code :
- R-PDSO-G4
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 500mA, 10A
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 45V
- Qualification Status :
- Not Qualified
- Power Dissipation :
- 1.6W
- Emitter Base Voltage (VEBO) :
- 6V
- Continuous Collector Current :
- 5A
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 1.8mm
- Max Breakdown Voltage :
- 30V
- Max Collector Current :
- 5A
- Mount :
- Surface Mount
- Width :
- 3.5mm
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- 1.2V
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 1V
- Pin Count :
- 4
- Number of Pins :
- 3
- Length :
- 6.5mm
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 1.6W
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-261-4, TO-261AA
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Datasheets
- STN888

PNP 150°C TJ 10μA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
STN888 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.2V @ 500mA, 10A.Continuous collector voltages of 5A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 5A volts.
STN888 Features
the DC current gain for this device is 100 @ 500mA 1V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 500mA, 10A
the emitter base voltage is kept at 6V
STN888 Applications
There are a lot of STMicroelectronics
STN888 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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