STL65DN3LLH5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Arrays

Interface :

CAN, I2C, I2S, SPI, UART, USART, USB

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-N6

Pin Count :

8

Max Frequency :

120MHz

Radiation Hardening :

No

Max Power Dissipation :

60W

FET Type :

2 N-Channel (Dual)

Continuous Drain Current (ID) :

65A

Package / Case :

8-PowerVDFN

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

RAM Size :

132kB

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

76A

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 25V

Packaging :

Tape and Reel (TR)

Data Bus Width :

32b

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Timers/Counters :

14

Memory Type :

Flash

Lifecycle Status :

Obsolete (Last Updated: 7 months ago)

Series :

STripFET™ V

Number of Programmable I/O :

114

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 9.5A, 10V

Watchdog Timer :

yes

Element Configuration :

Dual

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Lead Free :

Lead Free

Resistance :

6.5mOhm

Case Connection :

DRAIN

JESD-609 Code :

e3

Number of Terminations :

6

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

30V

FET Feature :

Logic Level Gate

Mounting Type :

Surface Mount

Number of Pins :

8

Gate to Source Voltage (Vgs) :

22V

Base Part Number :

STL65

Number of Elements :

2

Power Dissipation :

60W

Drain Current-Max (Abs) (ID) :

19A

Memory Size :

768kB

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Terminal Finish :

Matte Tin (Sn)

Core Architecture :

ARM