STL6NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

420pF @ 50V

Turn-Off Delay Time :

40 ns

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

NO LEAD

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.92Ohm

Transistor Element Material :

SILICON

Rise Time :

8ns

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

1A

Avalanche Energy Rating (Eas) :

65 mJ

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

5.75A Tc

Terminal Position :

QUAD

Fall Time (Typ) :

9 ns

Pin Count :

12

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

23A

Package / Case :

8-PowerVDFN

Series :

MDmesh™ II

Qualification Status :

Not Qualified

Power Dissipation :

70W

Drain to Source Breakdown Voltage :

600V

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Vgs (Max) :

±25V

Rds On (Max) @ Id, Vgs :

920m Ω @ 2.3A, 10V

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

25V

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

Base Part Number :

STL6

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Number of Pins :

8

Continuous Drain Current (ID) :

5.75A

Power Dissipation-Max :

70W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

12

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V