STL36DN6F7
- Mfr.Part #
- STL36DN6F7
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET 2 N-CH 60V 33A POWERFLAT
- Stock
- 46
- In Stock :
- 46
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Gate Charge (Qg) (Max) @ Vgs :
- 8nC @ 10V
- Package / Case :
- 8-PowerVDFN
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Drain Current-Max (Abs) (ID) :
- 36A
- Number of Channels :
- 2
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 420pF @ 30V
- JESD-30 Code :
- R-PDSO-F6
- Gate to Source Voltage (Vgs) :
- 20V
- Max Junction Temperature (Tj) :
- 175°C
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Temperature :
- -55°C~175°C TJ
- Height :
- 1mm
- FET Feature :
- Standard
- Mounting Type :
- Surface Mount
- Base Part Number :
- STL36
- FET Type :
- 2 N-Channel (Dual)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Terminal Finish :
- Matte Tin (Sn)
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 27m Ω @ 4.5A, 10V
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Turn On Delay Time :
- 7.85 ns
- Surface Mount :
- yes
- Reach Compliance Code :
- not_compliant
- Current - Continuous Drain (Id) @ 25°C :
- 33A Tc
- Pulsed Drain Current-Max (IDM) :
- 144A
- Packaging :
- Tape and Reel (TR)
- Manufacturer Package Identifier :
- PowerFLATTM_8256945_DI_typeC
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Series :
- STripFET™
- Power Dissipation :
- 58W
- Number of Elements :
- 2
- Number of Terminations :
- 6
- Turn-Off Delay Time :
- 12.1 ns
- Factory Lead Time :
- 38 Weeks
- Drain to Source Breakdown Voltage :
- 60V
- Continuous Drain Current (ID) :
- 33A
- Transistor Element Material :
- SILICON
- Datasheets
- STL36DN6F7

STL36DN6F7 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available at
STL36DN6F7 Description
This dual N-channel power MOSFET uses STripFET F7 technology and an enhanced groove gate structure to achieve extremely low on-resistance, while reducing internal capacitance and gate charge to achieve faster and more efficient switches.
STL36DN6F7 Features
?¤ Among the lowest RDS(on) on the market
?¤ Excellent figure of merit (FoM)
?¤ Low Crss/Ciss ratio for EMI immunity
?¤ High avalanche ruggedness
STL36DN6F7 Applications
?¤ Switching applications
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