STL35N6F3

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Mfr.Part #
STL35N6F3
Manufacturer
STMicroelectronics
Package / Case
8-PowerVDFN
Datasheet
Download
Description
MOSFET N-CH 60V 35A POWERFLAT
Stock
43,594
In Stock :
43,594

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
STripFET™ III
ECCN Code :
EAR99
Terminal Form :
Flat
Avalanche Energy Rating (Eas) :
409 mJ
Continuous Drain Current (ID) :
44A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Base Part Number :
STL35
Drain to Source Breakdown Voltage :
60V
Rds On (Max) @ Id, Vgs :
22m Ω @ 3A, 10V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C~175°C TJ
Turn On Delay Time :
9.7 ns
Package / Case :
8-PowerVDFN
Packaging :
Tape and Reel (TR)
Radiation Hardening :
No
Mount :
Surface Mount
Transistor Element Material :
SILICON
Lead Free :
Lead Free
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
35A Tc
Fall Time (Typ) :
4 ns
Power Dissipation :
80W
Number of Pins :
8
Number of Elements :
1
Drain Current-Max (Abs) (ID) :
35A
JESD-30 Code :
R-PDSO-F5
Element Configuration :
Single
FET Type :
N-Channel
Power Dissipation-Max :
5W Ta 80W Tc
Turn-Off Delay Time :
19 ns
Number of Terminations :
5
Rise Time :
2.9ns
Transistor Application :
SWITCHING
Gate to Source Voltage (Vgs) :
20V
Resistance :
22mOhm
RoHS Status :
ROHS3 Compliant
Case Connection :
DRAIN
Vgs(th) (Max) @ Id :
4V @ 250µA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±20V
Terminal Position :
Dual
Datasheets
STL35N6F3
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STL35N6F3 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:STL35, Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Package / Case:8-PowerVDFN, Number of Pins:8, Number of Terminations:5, STL35N6F3 pinout, STL35N6F3 datasheet PDF, STL35N6F3 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STL35N6F3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STL35N6F3


N-Channel Tape & Reel (TR) 22m Ω @ 3A, 10V ±20V 8-PowerVDFN

STL35N6F3 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 409 mJ.Its continuous drain current is 44A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60V, and this device has a drain-to-source breakdown voltage of 60V voltage.Its drain current is 35A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 19 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.7 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.

STL35N6F3 Features


the avalanche energy rating (Eas) is 409 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 19 ns


STL35N6F3 Applications


There are a lot of STMicroelectronics
STL35N6F3 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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