STL35N6F3
- Mfr.Part #
- STL35N6F3
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 35A POWERFLAT
- Stock
- 43,594
- In Stock :
- 43,594
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- STripFET™ III
- ECCN Code :
- EAR99
- Terminal Form :
- Flat
- Avalanche Energy Rating (Eas) :
- 409 mJ
- Continuous Drain Current (ID) :
- 44A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Base Part Number :
- STL35
- Drain to Source Breakdown Voltage :
- 60V
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 3A, 10V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~175°C TJ
- Turn On Delay Time :
- 9.7 ns
- Package / Case :
- 8-PowerVDFN
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- Fall Time (Typ) :
- 4 ns
- Power Dissipation :
- 80W
- Number of Pins :
- 8
- Number of Elements :
- 1
- Drain Current-Max (Abs) (ID) :
- 35A
- JESD-30 Code :
- R-PDSO-F5
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 5W Ta 80W Tc
- Turn-Off Delay Time :
- 19 ns
- Number of Terminations :
- 5
- Rise Time :
- 2.9ns
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 20V
- Resistance :
- 22mOhm
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- DRAIN
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Terminal Position :
- Dual
- Datasheets
- STL35N6F3

N-Channel Tape & Reel (TR) 22m Ω @ 3A, 10V ±20V 8-PowerVDFN
STL35N6F3 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 409 mJ.Its continuous drain current is 44A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60V, and this device has a drain-to-source breakdown voltage of 60V voltage.Its drain current is 35A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 19 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.7 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STL35N6F3 Features
the avalanche energy rating (Eas) is 409 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 19 ns
STL35N6F3 Applications
There are a lot of STMicroelectronics
STL35N6F3 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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