STGP3NB60FD
- Mfr.Part #
- STGP3NB60FD
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IGBT 600V 6A 68W TO220
- Stock
- 21,530
- In Stock :
- 21,530
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Collector Emitter Voltage (VCEO) :
- 2.4V
- Reverse Recovery Time :
- 45 ns
- Switching Energy :
- 125μJ (off)
- Test Condition :
- 480V, 3A, 10 Ω, 15V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 68W
- Max Power Dissipation :
- 68W
- JEDEC-95 Code :
- TO-220AB
- JESD-30 Code :
- R-PSFM-T3
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 600V
- Max Collector Current :
- 6A
- Mounting Type :
- Through Hole
- Current Rating :
- 3A
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tube
- Current - Collector Pulsed (Icm) :
- 24A
- Turn Off Time-Nom (toff) :
- 535 ns
- Number of Terminations :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- Gate-Emitter Voltage-Max :
- 20V
- Lead Free :
- Lead Free
- Gate-Emitter Thr Voltage-Max :
- 5V
- Base Part Number :
- STGP3
- Mount :
- Through Hole
- Power Dissipation :
- 25W
- Pin Count :
- 3
- Input Type :
- Standard
- Package / Case :
- TO-220-3
- Qualification Status :
- Not Qualified
- Collector Emitter Breakdown Voltage :
- 600V
- Vce(on) (Max) @ Vge, Ic :
- 2.4V @ 15V, 3A
- Series :
- PowerMESH™
- Td (on/off) @ 25°C :
- 12.5ns/105ns
- Turn On Time :
- 16.5 ns
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 1.9V
- Gate Charge :
- 16nC
- Polarity/Channel Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Transistor Application :
- Motor Control
- Datasheets
- STGP3NB60FD

STGP3NB60FD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGP3NB60FD DESCRIPTION
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH? IGBTs, with outstanding performances. The suffix “F” identifies a family optimized to achieve very low switching times for frequency applications (<40 KHz).
STGP3NB60FD Features
■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
■ LOW ON-VOLTAGE DROP (Vcesat)
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ OFF LOSSES INCLUDE TAIL CURRENT
■ HIGH FREQUENCY OPERATION
■ SHORT CIRCUIT RATED
STGP3NB60FD APPLICATIONS
■ MOTOR CONTROLS
■ SMPS AND PFC IN BOTH HARD SWITCHING
AND RESONANT TOPOLOGIES
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