STGP30NC60S

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Base Part Number :

STGP30

Gate-Emitter Voltage-Max :

20V

Switching Energy :

300μJ (on), 1.28mJ (off)

Element Configuration :

Single

Test Condition :

480V, 20A, 10 Ω, 15V

Turn On Time :

30 ns

Td (on/off) @ 25°C :

21.5ns/180ns

JESD-30 Code :

R-PSFM-T3

Radiation Hardening :

No

Number of Elements :

1

Power - Max :

175W

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Turn Off Time-Nom (toff) :

555 ns

Series :

PowerMESH™

Collector Emitter Voltage (VCEO) :

600V

Transistor Element Material :

SILICON

Vce(on) (Max) @ Vge, Ic :

1.9V @ 15V, 20A

Collector Emitter Breakdown Voltage :

600V

Max Power Dissipation :

175W

Mounting Type :

Through Hole

Number of Terminations :

3

Transistor Application :

POWER CONTROL

JEDEC-95 Code :

TO-220AB

Input Type :

Standard

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Package / Case :

TO-220-3

Pin Count :

3

Polarity/Channel Type :

N-Channel

Case Connection :

COLLECTOR

Mount :

Through Hole

Gate Charge :

96nC

Packaging :

Tube

Current - Collector Pulsed (Icm) :

150A

Gate-Emitter Thr Voltage-Max :

5.75V

Max Collector Current :

55A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)