STGP30NC60K

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Mounting Type :

Through Hole

Collector Emitter Voltage (VCEO) :

600V

Collector Emitter Breakdown Voltage :

600V

JESD-30 Code :

R-PSFM-T3

Max Collector Current :

60A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate-Emitter Voltage-Max :

20V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge :

96nC

Element Configuration :

Single

Test Condition :

480V, 20A, 10 Ω, 15V

Switching Energy :

350μJ (on), 435μJ (off)

Transistor Application :

POWER CONTROL

Turn Off Time-Nom (toff) :

290 ns

Base Part Number :

STGP30

Turn On Time :

41 ns

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Pin Count :

3

Mount :

Through Hole

Series :

PowerMESH™

Max Power Dissipation :

185W

Number of Elements :

1

Max Breakdown Voltage :

600V

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

N-Channel

Input Type :

Standard

Power - Max :

185W

Qualification Status :

Not Qualified

Package / Case :

TO-220-3

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 20A

Current - Collector Pulsed (Icm) :

125A

Gate-Emitter Thr Voltage-Max :

6.5V

Td (on/off) @ 25°C :

29ns/120ns

Packaging :

Tube

Turn-Off Delay Time :

120 µs

Lead Free :

Lead Free

Pbfree Code :

yes

Turn On Delay Time :

29 ns