STD7NM80

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Element Material :

SILICON

Dual Supply Voltage :

800V

Mount :

Surface Mount

Height :

2.4mm

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

90W Tc

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

MDmesh™

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

10 ns

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

620pF @ 25V

Transistor Application :

SWITCHING

FET Type :

N-Channel

Continuous Drain Current (ID) :

6.5A

Vgs (Max) :

±30V

Resistance :

1.05Ohm

Pin Count :

3

Terminal Finish :

Matte Tin (Sn) - annealed

Turn-Off Delay Time :

35 ns

Threshold Voltage :

4V

Termination :

SMD/SMT

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Current - Continuous Drain (Id) @ 25°C :

6.5A Tc

Element Configuration :

Single

Factory Lead Time :

16 Weeks

Width :

6.2mm

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

30V

Base Part Number :

STD7

Turn On Delay Time :

20 ns

ECCN Code :

EAR99

Case Connection :

Isolated

Number of Terminations :

2

Nominal Vgs :

4 V

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Avalanche Energy Rating (Eas) :

240 mJ

Rise Time :

8ns

Power Dissipation :

90W

Length :

6.6mm

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

26A

Number of Pins :

3

Drain to Source Breakdown Voltage :

800V

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

1.05 Ω @ 3.25A, 10V