STD70N10F4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

125W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn) - annealed

Continuous Drain Current (ID) :

60A

Number of Terminations :

2

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Series :

DeepGATE™, STripFET™

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

Mount :

Surface Mount

Rise Time :

20ns

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

85nC @ 10V

Number of Pins :

3

Turn-Off Delay Time :

65 ns

Pin Count :

3

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

125W Tc

Number of Elements :

1

Lead Free :

Lead Free

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Fall Time (Typ) :

20 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Resistance :

19.5MOhm

Turn On Delay Time :

30 ns

ECCN Code :

EAR99

Terminal Form :

Gull wing

Radiation Hardening :

No

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

5800pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Time@Peak Reflow Temperature-Max (s) :

30

Base Part Number :

STD70N

Rds On (Max) @ Id, Vgs :

19.5m Ω @ 30A, 10V

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

240A

Drain to Source Breakdown Voltage :

100V