STD70NH02LT4
- Mfr.Part #
- STD70NH02LT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 24V 60A DPAK
- Stock
- 540
- In Stock :
- 540
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 1.8V @ 250μA
- Power Dissipation-Max :
- 70W Tc
- JEDEC-95 Code :
- TO-252AA
- Series :
- STripFET™ II
- Base Part Number :
- STD70N
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Continuous Drain Current (ID) :
- 60A
- Drain-source On Resistance-Max :
- 0.008Ohm
- Terminal Finish :
- Matte Tin (Sn)
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±20V
- Peak Reflow Temperature (Cel) :
- 260
- Reach Compliance Code :
- not_compliant
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 2050pF @ 25V
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 30A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Number of Elements :
- 1
- Current Rating :
- 60A
- JESD-30 Code :
- R-PSSO-G2
- Turn-Off Delay Time :
- 18 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 2
- Rise Time :
- 200ns
- Gate to Source Voltage (Vgs) :
- 20V
- Element Configuration :
- Single
- Case Connection :
- DRAIN
- Mount :
- Surface Mount
- Avalanche Energy Rating (Eas) :
- 360 mJ
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 24V
- Voltage - Rated DC :
- 24V
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 25 ns
- Transistor Element Material :
- SILICON
- Additional Feature :
- LOW THRESHOLD
- Pulsed Drain Current-Max (IDM) :
- 240A
- Operating Temperature :
- -55°C~175°C TJ
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation :
- 70W
- Terminal Form :
- Gull wing
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Datasheets
- STD70NH02LT4
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N-Channel Tape & Reel (TR) 8m Ω @ 30A, 10V ±20V 2050pF @ 25V 22nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD70NH02LT4 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 360 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2050pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 60A amps.In this device, the drain-source breakdown voltage is 24V and VGS=24V, so the drain-source breakdown voltage is 24V in this case.It is [18 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 240A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).
STD70NH02LT4 Features
the avalanche energy rating (Eas) is 360 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 24V voltage
the turn-off delay time is 18 ns
based on its rated peak drain current 240A.
STD70NH02LT4 Applications
There are a lot of STMicroelectronics
STD70NH02LT4 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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