STD7N52DK3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

12 Weeks

Fall Time (Typ) :

22 ns

Packaging :

Tape and Reel (TR)

Operating Temperature :

150°C TJ

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

24A

Number of Terminations :

2

Continuous Drain Current (ID) :

6A

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn) - annealed

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

6A

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lifecycle Status :

NRND (Last Updated: 7 months ago)

Vgs (Max) :

±30V

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

870pF @ 50V

Resistance :

1.15Ohm

Rise Time :

22ns

Power Dissipation-Max :

90W Tc

Additional Feature :

ULTRA-LOW RESISTANCE

Height :

2.4mm

Base Part Number :

STD7

Power Dissipation :

90W

Length :

6.6mm

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

1.15 Ω @ 3A, 10V

Turn-Off Delay Time :

37 ns

Turn On Delay Time :

12 ns

Series :

SuperFREDmesh3™

Transistor Element Material :

SILICON

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Avalanche Energy Rating (Eas) :

100 mJ

Threshold Voltage :

3.75V

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

620V

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Drain to Source Voltage (Vdss) :

525V

RoHS Status :

ROHS3 Compliant

Width :

6.2mm

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Mount :

Surface Mount

JESD-609 Code :

e3