STD7N52DK3

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Mfr.Part #
STD7N52DK3
Manufacturer
STMicroelectronics
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 525V 6A DPAK
Stock
5,715
In Stock :
5,715

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Peak Reflow Temperature (Cel) :
260
Terminal Form :
Gull wing
JESD-30 Code :
R-PSSO-G2
Additional Feature :
ULTRA-LOW RESISTANCE
Base Part Number :
STD7
Resistance :
1.15Ohm
Number of Terminations :
2
REACH SVHC :
No SVHC
Drain Current-Max (Abs) (ID) :
6A
Avalanche Energy Rating (Eas) :
100 mJ
Height :
2.4mm
Drain to Source Breakdown Voltage :
620V
Operating Mode :
ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
Matte Tin (Sn) - annealed
Width :
6.2mm
Packaging :
Tape and Reel (TR)
Vgs (Max) :
±30V
Drain to Source Voltage (Vdss) :
525V
Mount :
Surface Mount
Element Configuration :
Single
Continuous Drain Current (ID) :
6A
Pin Count :
3
Power Dissipation-Max :
90W Tc
Input Capacitance (Ciss) (Max) @ Vds :
870pF @ 50V
ECCN Code :
EAR99
Transistor Application :
SWITCHING
Number of Elements :
1
Rise Time :
22ns
Lifecycle Status :
NRND (Last Updated: 7 months ago)
FET Type :
N-Channel
JESD-609 Code :
e3
Transistor Element Material :
SILICON
Lead Free :
Lead Free
Threshold Voltage :
3.75V
Operating Temperature :
150°C TJ
Radiation Hardening :
No
Length :
6.6mm
Rds On (Max) @ Id, Vgs :
1.15 Ω @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C :
6A Tc
RoHS Status :
ROHS3 Compliant
Gate Charge (Qg) (Max) @ Vgs :
33nC @ 10V
Power Dissipation :
90W
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Pulsed Drain Current-Max (IDM) :
24A
Series :
SuperFREDmesh3™
Turn-Off Delay Time :
37 ns
Turn On Delay Time :
12 ns
Factory Lead Time :
12 Weeks
Fall Time (Typ) :
22 ns
Gate to Source Voltage (Vgs) :
30V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type :
Surface Mount
Number of Pins :
3
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STD7N52DK3 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:STD7, Number of Terminations:2, Operating Temperature:150°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Number of Pins:3, STD7N52DK3 pinout, STD7N52DK3 datasheet PDF, STD7N52DK3 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STD7N52DK3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STD7N52DK3


N-Channel Tape & Reel (TR) 1.15 Ω @ 3A, 10V ±30V 870pF @ 50V 33nC @ 10V 525V TO-252-3, DPak (2 Leads + Tab), SC-63

STD7N52DK3 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 100 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 870pF @ 50V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 6A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=620V. And this device has 620V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 6A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 37 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 24A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 12 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 3.75V threshold voltage. Operating this transistor requires a 525V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

STD7N52DK3 Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 620V voltage
the turn-off delay time is 37 ns
based on its rated peak drain current 24A.
a threshold voltage of 3.75V
a 525V drain to source voltage (Vdss)


STD7N52DK3 Applications


There are a lot of STMicroelectronics
STD7N52DK3 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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