STD7N52DK3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

22ns

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins :

3

Turn-Off Delay Time :

37 ns

Drain to Source Breakdown Voltage :

620V

ECCN Code :

EAR99

Resistance :

1.15Ohm

FET Type :

N-Channel

Threshold Voltage :

3.75V

Avalanche Energy Rating (Eas) :

100 mJ

Mounting Type :

Surface Mount

Additional Feature :

ULTRA-LOW RESISTANCE

Pin Count :

3

Lifecycle Status :

NRND (Last Updated: 7 months ago)

Number of Terminations :

2

Turn On Delay Time :

12 ns

Number of Elements :

1

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Operating Temperature :

150°C TJ

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

870pF @ 50V

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Vgs(th) (Max) @ Id :

4.5V @ 50μA

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Width :

6.2mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

2.4mm

Pulsed Drain Current-Max (IDM) :

24A

REACH SVHC :

No SVHC

Factory Lead Time :

12 Weeks

Vgs (Max) :

±30V

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

JESD-609 Code :

e3

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

6A

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Power Dissipation-Max :

90W Tc

Rds On (Max) @ Id, Vgs :

1.15 Ω @ 3A, 10V

Power Dissipation :

90W

Base Part Number :

STD7

Continuous Drain Current (ID) :

6A

Series :

SuperFREDmesh3™

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Length :

6.6mm

Terminal Finish :

Matte Tin (Sn) - annealed

Fall Time (Typ) :

22 ns

Drain to Source Voltage (Vdss) :

525V