STD75N3LLH6
- Mfr.Part #
- STD75N3LLH6
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 75A DPAK
- Stock
- 3,036
- In Stock :
- 3,036
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 37 ns
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Rds On (Max) @ Id, Vgs :
- 5.5m Ω @ 37.5A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Series :
- DeepGATE™, STripFET™ VI
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- JESD-30 Code :
- R-PSSO-G2
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Terminal Position :
- Single
- Length :
- 6.6mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 1690pF @ 25V
- Case Connection :
- DRAIN
- Number of Pins :
- 3
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Fall Time (Typ) :
- 12 ns
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Threshold Voltage :
- 1.7V
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 60W
- Continuous Drain Current (ID) :
- 75A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 4.5V
- Number of Elements :
- 1
- Turn On Delay Time :
- 9.5 ns
- Drain-source On Resistance-Max :
- 0.008Ohm
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Height :
- 2.4mm
- Width :
- 6.2mm
- Power Dissipation-Max :
- 60W Tc
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- STD75N
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Number of Terminations :
- 2
- Drain to Source Voltage (Vdss) :
- 30V
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±20V
- REACH SVHC :
- No SVHC
- Rise Time :
- 30ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Datasheets
- STD75N3LLH6
STD75N3LLH6 Documents
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N-Channel Tape & Reel (TR) 5.5m Ω @ 37.5A, 10V ±20V 1690pF @ 25V 17nC @ 4.5V 30V TO-252-3, DPak (2 Leads + Tab), SC-63
STD75N3LLH6 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1690pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 75A amps.It is [37 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 9.5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1.7V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
STD75N3LLH6 Features
a continuous drain current (ID) of 75A
the turn-off delay time is 37 ns
a threshold voltage of 1.7V
a 30V drain to source voltage (Vdss)
STD75N3LLH6 Applications
There are a lot of STMicroelectronics
STD75N3LLH6 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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