STD75N3LLH6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

60W Tc

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Threshold Voltage :

1.7V

Height :

2.4mm

Vgs (Max) :

±20V

Pbfree Code :

yes

Number of Elements :

1

Power Dissipation :

60W

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

75A

Length :

6.6mm

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Rise Time :

30ns

Number of Terminations :

2

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 37.5A, 10V

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.008Ohm

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Series :

DeepGATE™, STripFET™ VI

Base Part Number :

STD75N

Turn On Delay Time :

9.5 ns

JESD-30 Code :

R-PSSO-G2

Pin Count :

3

REACH SVHC :

No SVHC

Turn-Off Delay Time :

37 ns

Drain to Source Voltage (Vdss) :

30V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

1690pF @ 25V

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

12 ns

Width :

6.2mm

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Mount :

Surface Mount

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn) - annealed

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V