STD7ANM60N
- Mfr.Part #
- STD7ANM60N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 5A DPAK
- Stock
- 1,520
- In Stock :
- 1,520
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- 150°C TJ
- Number of Channels :
- 1
- Power Dissipation-Max :
- 45W Tc
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 7 ns
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Drain to Source Breakdown Voltage :
- 600V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Factory Lead Time :
- 16 Weeks
- Base Part Number :
- STD7
- Rds On (Max) @ Id, Vgs :
- 900m Ω @ 2.5A, 10V
- Continuous Drain Current (ID) :
- 5A
- Vgs (Max) :
- ±25V
- FET Type :
- N-Channel
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Fall Time (Typ) :
- 12 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Width :
- 9.35mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 363pF @ 50V
- Number of Pins :
- 3
- Height :
- 4.6mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 26 ns
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Series :
- Automotive, AEC-Q101, MDmesh™ II
- Length :
- 10.4mm
- Rise Time :
- 10ns
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Datasheets
- STD7ANM60N
STD7ANM60N Documents
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N-Channel Tape & Reel (TR) 900m Ω @ 2.5A, 10V ±25V 363pF @ 50V 14nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD7ANM60N Description
These N-channel Power MOSFETs were created using MDmeshTM technology's second generation. These ground-breaking Power MOSFETs combine a vertical structure with the company's strip layout to produce one of the lowest on-resistance and gate charge in the world. As a result, they are well-suited to the most demanding high-efficiency converters.
STD7ANM60N Features
-
AEC-Q101 qualified
-
100% avalanche tested
-
Low input capacitance and gate charge
-
Low gate input resistance
STD7ANM60N Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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