STD7ANM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4V @ 250µA

Height :

4.6mm

Element Configuration :

Single

Rise Time :

10ns

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

25V

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Radiation Hardening :

No

Mounting Type :

Surface Mount

Number of Channels :

1

Factory Lead Time :

16 Weeks

Vgs (Max) :

±25V

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

600V

Series :

Automotive, AEC-Q101, MDmesh™ II

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

900m Ω @ 2.5A, 10V

Length :

10.4mm

Operating Temperature :

150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn-Off Delay Time :

26 ns

Input Capacitance (Ciss) (Max) @ Vds :

363pF @ 50V

Continuous Drain Current (ID) :

5A

Number of Pins :

3

ECCN Code :

EAR99

Fall Time (Typ) :

12 ns

Turn On Delay Time :

7 ns

Width :

9.35mm

Base Part Number :

STD7

Power Dissipation-Max :

45W Tc