STD7NM64N
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- Mfr.Part #
- STD7NM64N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 640V 5A DPAK
- Stock
- 2,725
- In Stock ：
- 2,725
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Continuous Drain Current (ID) :
- 5A
- Lifecycle Status :
- NRND (Last Updated: 8 months ago)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 60W Tc
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- STD7
- Vgs (Max) :
- ±25V
- Series :
- MDmesh™ II
- Gate to Source Voltage (Vgs) :
- 25V
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 363pF @ 50V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drain to Source Breakdown Voltage :
- 640V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn On Delay Time :
- 7 ns
- Turn-Off Delay Time :
- 26 ns
- Number of Channels :
- 1
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 12 ns
- Rise Time :
- 10ns
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 1.05 Ω @ 2.5A, 10V
- Element Configuration :
- Single
- Weight :
- 3.949996g
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Datasheets
- STD7NM64N
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N-Channel Tape & Reel (TR) 1.05 Ω @ 2.5A, 10V ±25V 363pF @ 50V 14nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD7NM64N Overview
A device's maximal input capacitance is 363pF @ 50V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 640V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 26 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.This device reduces its overall power consumption by using drive voltage (10V).
STD7NM64N Features
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 640V voltage
the turn-off delay time is 26 ns
STD7NM64N Applications
There are a lot of STMicroelectronics
STD7NM64N applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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