STD7NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

45W Tc

Base Part Number :

STD7

Avalanche Energy Rating (Eas) :

119 mJ

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

10ns

Threshold Voltage :

3V

Length :

6.6mm

Width :

6.2mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

25V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Rds On (Max) @ Id, Vgs :

900m Ω @ 2.5A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Resistance :

900mOhm

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Radiation Hardening :

No

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

5A

Drain to Source Breakdown Voltage :

600V

Continuous Drain Current (ID) :

5A

Height :

2.4mm

Input Capacitance (Ciss) (Max) @ Vds :

363pF @ 50V

Operating Temperature :

150°C TJ

Series :

MDmesh™ II

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

20A

Fall Time (Typ) :

12 ns

Mount :

Surface Mount

Element Configuration :

Single

Factory Lead Time :

16 Weeks

Number of Elements :

1

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±25V

Turn On Delay Time :

7 ns

Turn-Off Delay Time :

26 ns

Power Dissipation :

45W