STD7NM50N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

780m Ω @ 2.5A, 10V

Reach Compliance Code :

not_compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Lead Free :

Lead Free

Base Part Number :

STD7

Transistor Element Material :

SILICON

Power Dissipation-Max :

45W Tc

Transistor Application :

SWITCHING

Number of Terminations :

2

Series :

MDmesh™ II

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Nominal Vgs :

3 V

Avalanche Energy Rating (Eas) :

100 mJ

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Fall Time (Typ) :

9 ns

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 50V

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

25V

ECCN Code :

EAR99

Number of Pins :

3

Pin Count :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

FET Type :

N-Channel

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Continuous Drain Current (ID) :

2.5A

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

40 ns

Mounting Type :

Surface Mount

Power Dissipation :

45W

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Drain Current-Max (Abs) (ID) :

5A

Resistance :

780mOhm

Pulsed Drain Current-Max (IDM) :

20A

Terminal Finish :

Matte Tin (Sn)

Rise Time :

5ns

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

500V