STD7NM50N-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Vgs (Max) :

±25V

Power Dissipation :

45W

Drain to Source Breakdown Voltage :

500V

Pulsed Drain Current-Max (IDM) :

20A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

MDmesh™ II

Transistor Application :

SWITCHING

Rise Time :

5ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

100 mJ

Reach Compliance Code :

Unknown

Pin Count :

3

Fall Time (Typ) :

9 ns

Number of Terminations :

3

Element Configuration :

Single

Number of Elements :

1

Continuous Drain Current (ID) :

5A

Drain-source On Resistance-Max :

0.78Ohm

JESD-30 Code :

R-PSIP-T3

Qualification Status :

Not Qualified

Packaging :

Tube

Mount :

Through Hole

Turn-Off Delay Time :

40 ns

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

25V

Power Dissipation-Max :

45W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Base Part Number :

STD7

Drain Current-Max (Abs) (ID) :

5A

Rds On (Max) @ Id, Vgs :

780m Ω @ 2.5A, 10V

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 50V