STD7NK30Z

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

11 ns

Rds On (Max) @ Id, Vgs :

900m Ω @ 2.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.9Ohm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rise Time :

25ns

Power Dissipation :

50W

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

10 ns

JEDEC-95 Code :

TO-252AA

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

300V

Transistor Application :

SWITCHING

Turn-Off Delay Time :

20 ns

Pulsed Drain Current-Max (IDM) :

20A

Radiation Hardening :

No

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Number of Terminations :

2

Continuous Drain Current (ID) :

5A

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Mount :

Surface Mount

Vgs (Max) :

±30V

Number of Pins :

3

Base Part Number :

STD7

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

5A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Series :

SuperMESH™

Power Dissipation-Max :

50W Tc

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

FET Type :

N-Channel