STD7N80K5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

6.2mm

Input Capacitance (Ciss) (Max) @ Vds :

360pF @ 100V

Length :

6.6mm

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Gate Charge (Qg) (Max) @ Vgs :

13.4nC @ 10V

Mount :

Surface Mount

Radiation Hardening :

No

Transistor Application :

SWITCHING

Fall Time (Typ) :

20.2 ns

Number of Pins :

3

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Turn On Delay Time :

11.3 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rise Time :

8.3ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

5V @ 100µA

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

6A

Resistance :

1.2Ohm

Vgs (Max) :

±30V

Drain to Source Voltage (Vdss) :

800V

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Turn-Off Delay Time :

23.7 ns

Power Dissipation :

110W

Base Part Number :

STD7

FET Type :

N-Channel

Element Configuration :

Single

DS Breakdown Voltage-Min :

800V

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 3A, 10V

Factory Lead Time :

17 Weeks

Continuous Drain Current (ID) :

6A

Height :

2.4mm

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Series :

SuperMESH5™

Power Dissipation-Max :

110W Tc

Gate to Source Voltage (Vgs) :

30V

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

24A

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

88 mJ