STD7N80K5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Gate Charge (Qg) (Max) @ Vgs :

13.4nC @ 10V

Number of Terminations :

2

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

88 mJ

Packaging :

Tape and Reel (TR)

Rise Time :

8.3ns

Number of Pins :

3

Width :

6.2mm

Pulsed Drain Current-Max (IDM) :

24A

Height :

2.4mm

Fall Time (Typ) :

20.2 ns

Continuous Drain Current (ID) :

6A

JESD-30 Code :

R-PSSO-G2

Power Dissipation :

110W

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Resistance :

1.2Ohm

DS Breakdown Voltage-Min :

800V

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 3A, 10V

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

360pF @ 100V

Mount :

Surface Mount

Power Dissipation-Max :

110W Tc

Mounting Type :

Surface Mount

Length :

6.6mm

RoHS Status :

ROHS3 Compliant

Series :

SuperMESH5™

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Voltage (Vdss) :

800V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Drain Current-Max (Abs) (ID) :

6A

Turn-Off Delay Time :

23.7 ns

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

FET Type :

N-Channel

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 100µA

Base Part Number :

STD7

Gate to Source Voltage (Vgs) :

30V

Turn On Delay Time :

11.3 ns

Factory Lead Time :

17 Weeks

Element Configuration :

Single