STD7N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

3V

Transistor Element Material :

SILICON

Number of Elements :

1

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

5A Tc

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

19.3 ns

Series :

MDmesh™ II Plus

Drain to Source Breakdown Voltage :

600V

Packaging :

Tape and Reel (TR)

Power Dissipation :

60W

Operating Mode :

ENHANCEMENT MODE

Height :

2.4mm

Vgs (Max) :

±25V

Gate Charge (Qg) (Max) @ Vgs :

8.8nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

7.6 ns

Resistance :

950mOhm

Mount :

Surface Mount

Power Dissipation-Max :

60W Tc

Continuous Drain Current (ID) :

5A

Rise Time :

7.2ns

Transistor Application :

SWITCHING

Element Configuration :

Single

Width :

6.2mm

Pulsed Drain Current-Max (IDM) :

20A

Rds On (Max) @ Id, Vgs :

950m Ω @ 2.5A, 10V

Number of Terminations :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Fall Time (Typ) :

15.9 ns

Avalanche Energy Rating (Eas) :

99 mJ

Radiation Hardening :

No

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

271pF @ 100V

Gate to Source Voltage (Vgs) :

25V

Drain Current-Max (Abs) (ID) :

5A

Length :

6.6mm

Lead Free :

Lead Free

Number of Pins :

3

REACH SVHC :

No SVHC

Contact Plating :

Tin

FET Type :

N-Channel

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

16 Weeks

JESD-30 Code :

R-PSSO-G2

Base Part Number :

STD7