STD7N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

271pF @ 100V

Avalanche Energy Rating (Eas) :

99 mJ

Height :

2.4mm

ECCN Code :

EAR99

Case Connection :

DRAIN

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

16 Weeks

Length :

6.6mm

Base Part Number :

STD7

Number of Pins :

3

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

7.6 ns

Number of Channels :

1

Rise Time :

7.2ns

Gate Charge (Qg) (Max) @ Vgs :

8.8nC @ 10V

Threshold Voltage :

3V

Power Dissipation-Max :

60W Tc

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

REACH SVHC :

No SVHC

Mount :

Surface Mount

Terminal Form :

Gull wing

Turn-Off Delay Time :

19.3 ns

Drain Current-Max (Abs) (ID) :

5A

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation :

60W

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Element Configuration :

Single

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

600V

Vgs (Max) :

±25V

Pulsed Drain Current-Max (IDM) :

20A

FET Type :

N-Channel

Fall Time (Typ) :

15.9 ns

Continuous Drain Current (ID) :

5A

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

25V

Width :

6.2mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

950m Ω @ 2.5A, 10V

Number of Terminations :

2

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Operating Mode :

ENHANCEMENT MODE

Series :

MDmesh™ II Plus

Resistance :

950mOhm