STD1802T4
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- Mfr.Part #
- STD1802T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A DPAK
- Stock
- 11,519
- In Stock ：
- 11,519
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 15W
- Frequency :
- 150MHz
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Collector Base Voltage (VCBO) :
- 80V
- Max Breakdown Voltage :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 150mA, 3A
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 3A
- Configuration :
- Single
- Base Part Number :
- STD18
- Transition Frequency :
- 150MHz
- Terminal Position :
- Single
- Collector Emitter Voltage (VCEO) :
- 60V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Factory Lead Time :
- 8 Weeks
- Number of Pins :
- 3
- Terminal Finish :
- Matte Tin (Sn) - annealed
- JESD-30 Code :
- R-PSSO-G2
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Power Dissipation :
- 15W
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Packaging :
- Cut Tape (CT)
- Emitter Base Voltage (VEBO) :
- 6V
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 2
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- STD1802T4
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NPN 150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Cut Tape (CT) Surface Mount
STD1802T4 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 100mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 150mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 3A volts.
STD1802T4 Features
the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 400mV @ 150mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
STD1802T4 Applications
There are a lot of STMicroelectronics
STD1802T4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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