STD1802T4
- Mfr.Part #
- STD1802T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A DPAK
- Stock
- 11,519
- In Stock :
- 11,519
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 2
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 6V
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Pins :
- 3
- Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 150mA, 3A
- Packaging :
- Cut Tape (CT)
- Transistor Type :
- NPN
- JESD-30 Code :
- R-PSSO-G2
- Terminal Form :
- Gull wing
- Base Part Number :
- STD18
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 60V
- Max Power Dissipation :
- 15W
- Factory Lead Time :
- 8 Weeks
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 80V
- Max Breakdown Voltage :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Collector Current :
- 3A
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Terminal Position :
- Single
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transition Frequency :
- 150MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 150MHz
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation :
- 15W
- Datasheets
- STD1802T4
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NPN 150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Cut Tape (CT) Surface Mount
STD1802T4 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 100mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 150mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 3A volts.
STD1802T4 Features
the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 400mV @ 150mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
STD1802T4 Applications
There are a lot of STMicroelectronics
STD1802T4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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