STD1802T4
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- Mfr.Part #
- STD1802T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A DPAK
- Stock
- 11,519
- In Stock ：
- 11,519
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 15W
- Terminal Form :
- Gull wing
- Number of Terminations :
- 2
- Collector Emitter Voltage (VCEO) :
- 60V
- Base Part Number :
- STD18
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Base Voltage (VCBO) :
- 80V
- Transition Frequency :
- 150MHz
- Radiation Hardening :
- No
- Factory Lead Time :
- 8 Weeks
- Mount :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Frequency :
- 150MHz
- Max Breakdown Voltage :
- 60V
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 150mA, 3A
- JESD-30 Code :
- R-PSSO-G2
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Cut Tape (CT)
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 15W
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Position :
- Single
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 3
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Max Collector Current :
- 3A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Configuration :
- Single
- Datasheets
- STD1802T4
STD1802T4 Documents
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NPN 150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Cut Tape (CT) Surface Mount
STD1802T4 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 100mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 150mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 3A volts.
STD1802T4 Features
the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 400mV @ 150mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
STD1802T4 Applications
There are a lot of STMicroelectronics
STD1802T4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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