STBV45G

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Mfr.Part #
STBV45G
Manufacturer
STMicroelectronics
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS NPN 400V 0.75A TO92-3
Stock
21,424
In Stock :
21,424

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Breakdown Voltage :
400V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
SWITCHING
Transistor Type :
NPN
Number of Elements :
1
Mount :
Through Hole
Number of Pins :
3
Emitter Base Voltage (VEBO) :
9V
Max Collector Current :
750mA
Current - Collector Cutoff (Max) :
250μA
Terminal Position :
BOTTOM
Collector Emitter Voltage (VCEO) :
400V
Max Power Dissipation :
950mW
Number of Terminations :
3
Element Configuration :
Single
JESD-609 Code :
e3
Terminal Finish :
Matte Tin (Sn)
Polarity/Channel Type :
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce :
5 @ 400mA 5V
Base Part Number :
STBV45
Transistor Element Material :
SILICON
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 135mA, 400mA
Power Dissipation :
950mW
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Mounting Type :
Through Hole
ECCN Code :
EAR99
Radiation Hardening :
No
Packaging :
Bulk
Operating Temperature :
150°C TJ
Pin Count :
3
Datasheets
STBV45G
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics STBV45G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Base Part Number:STBV45, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Mounting Type:Through Hole, Operating Temperature:150°C TJ, STBV45G pinout, STBV45G datasheet PDF, STBV45G amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics STBV45G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STBV45G


NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

STBV45G Overview


In this device, the DC current gain is 5 @ 400mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 135mA, 400mA.Keeping the emitter base voltage at 9V allows for a high level of efficiency.Maximum collector currents can be below 750mA volts.

STBV45G Features


the DC current gain for this device is 5 @ 400mA 5V
the vce saturation(Max) is 1.5V @ 135mA, 400mA
the emitter base voltage is kept at 9V


STBV45G Applications


There are a lot of STMicroelectronics
STBV45G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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