STBV45-AP

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Mfr.Part #
STBV45-AP
Manufacturer
STMicroelectronics
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS NPN 400V 0.75A TO92AP
Stock
5,848
In Stock :
5,848

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Voltage (VCEO) :
400V
Mount :
Through Hole
RoHS Status :
ROHS3 Compliant
Pbfree Code :
yes
Polarity/Channel Type :
NPN
Transistor Application :
SWITCHING
Max Breakdown Voltage :
400V
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins :
3
Transistor Type :
NPN
HTS Code :
8541.21.00.95
Emitter Base Voltage (VEBO) :
9V
Number of Elements :
1
Transistor Element Material :
SILICON
Power - Max :
950mW
Terminal Finish :
Matte Tin (Sn)
ECCN Code :
EAR99
hFE Min :
10
Collector Emitter Saturation Voltage :
400mV
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 135mA, 400mA
Radiation Hardening :
No
Collector Emitter Breakdown Voltage :
400V
Collector Base Voltage (VCBO) :
9V
Max Collector Current :
750mA
Operating Temperature :
150°C TJ
JESD-609 Code :
e3
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
3
Pin Count :
3
Current - Collector Cutoff (Max) :
250μA
Terminal Position :
BOTTOM
DC Current Gain (hFE) (Min) @ Ic, Vce :
5 @ 400mA 5V
Base Part Number :
STBV45
Max Power Dissipation :
950mW
Element Configuration :
Single
Packaging :
Tape and Box (TB)
Datasheets
STBV45-AP
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics STBV45-AP from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Number of Pins:3, Operating Temperature:150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Base Part Number:STBV45, STBV45-AP pinout, STBV45-AP datasheet PDF, STBV45-AP amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics STBV45-AP ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STBV45-AP


NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

STBV45-AP Overview


This device has a DC current gain of 5 @ 400mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 400mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 9V to achieve high efficiency.As a result, it can handle voltages as low as 400V volts.The maximum collector current is 750mA volts.

STBV45-AP Features


the DC current gain for this device is 5 @ 400mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1.5V @ 135mA, 400mA
the emitter base voltage is kept at 9V


STBV45-AP Applications


There are a lot of STMicroelectronics
STBV45-AP applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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