STBV45-AP

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

Radiation Hardening :

No

Number of Elements :

1

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Packaging :

Tape and Box (TB)

Collector Emitter Breakdown Voltage :

400V

Polarity/Channel Type :

NPN

Max Breakdown Voltage :

400V

Emitter Base Voltage (VEBO) :

9V

DC Current Gain (hFE) (Min) @ Ic, Vce :

5 @ 400mA 5V

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Number of Terminations :

3

Collector Base Voltage (VCBO) :

9V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Transistor Type :

NPN

Operating Temperature :

150°C TJ

Terminal Position :

BOTTOM

Collector Emitter Voltage (VCEO) :

400V

Pbfree Code :

yes

Collector Emitter Saturation Voltage :

400mV

HTS Code :

8541.21.00.95

Max Collector Current :

750mA

Terminal Finish :

Matte Tin (Sn)

Base Part Number :

STBV45

Element Configuration :

Single

hFE Min :

10

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

250μA

Pin Count :

3

Max Power Dissipation :

950mW

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 135mA, 400mA

Power - Max :

950mW

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Number of Pins :

3