STBV45-AP
- Mfr.Part #
- STBV45-AP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 400V 0.75A TO92AP
- Stock
- 5,848
- In Stock :
- 5,848
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Max Collector Current :
- 750mA
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 9V
- Collector Emitter Breakdown Voltage :
- 400V
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 135mA, 400mA
- JESD-609 Code :
- e3
- Power - Max :
- 950mW
- Terminal Finish :
- Matte Tin (Sn)
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 400V
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 5 @ 400mA 5V
- Collector Emitter Saturation Voltage :
- 400mV
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 9V
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 250μA
- Transistor Type :
- NPN
- Max Power Dissipation :
- 950mW
- Number of Pins :
- 3
- Packaging :
- Tape and Box (TB)
- Mount :
- Through Hole
- hFE Min :
- 10
- HTS Code :
- 8541.21.00.95
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Base Part Number :
- STBV45
- Polarity/Channel Type :
- NPN
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 400V
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- STBV45-AP

NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
STBV45-AP Overview
This device has a DC current gain of 5 @ 400mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 400mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 9V to achieve high efficiency.As a result, it can handle voltages as low as 400V volts.The maximum collector current is 750mA volts.
STBV45-AP Features
the DC current gain for this device is 5 @ 400mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1.5V @ 135mA, 400mA
the emitter base voltage is kept at 9V
STBV45-AP Applications
There are a lot of STMicroelectronics
STBV45-AP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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