STBV45G-AP

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Mfr.Part #
STBV45G-AP
Manufacturer
STMicroelectronics
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS NPN 400V 0.75A TO92AP
Stock
5,867
In Stock :
5,867

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Reach Compliance Code :
Unknown
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Collector Emitter Breakdown Voltage :
400V
Number of Terminations :
3
Collector Emitter Voltage (VCEO) :
1.5V
Packaging :
Tape and Box (TB)
Max Power Dissipation :
950mW
JESD-609 Code :
e3
Terminal Position :
BOTTOM
Pin Count :
3
RoHS Status :
ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Current - Collector Cutoff (Max) :
250μA
Transistor Element Material :
SILICON
Polarity/Channel Type :
NPN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 135mA, 400mA
Number of Elements :
1
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Base Part Number :
STBV45
Emitter Base Voltage (VEBO) :
9V
Mounting Type :
Through Hole
Element Configuration :
Single
Terminal Finish :
Matte Tin (Sn)
Qualification Status :
Not Qualified
ECCN Code :
EAR99
Max Breakdown Voltage :
400V
Mount :
Through Hole
Power - Max :
950mW
Max Collector Current :
750mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
5 @ 400mA 5V
Operating Temperature :
150°C TJ
Transistor Application :
SWITCHING
Transistor Type :
NPN
JESD-30 Code :
O-PBCY-T3
Datasheets
STBV45G-AP
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics STBV45G-AP from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Number of Terminations:3, Base Part Number:STBV45, Mounting Type:Through Hole, Operating Temperature:150°C TJ, STBV45G-AP pinout, STBV45G-AP datasheet PDF, STBV45G-AP amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics STBV45G-AP ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STBV45G-AP


NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

STBV45G-AP Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 5 @ 400mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 135mA, 400mA.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.There is a breakdown input voltage of 400V volts that it can take.Collector current can be as low as 750mA volts at its maximum.

STBV45G-AP Features


the DC current gain for this device is 5 @ 400mA 5V
the vce saturation(Max) is 1.5V @ 135mA, 400mA
the emitter base voltage is kept at 9V


STBV45G-AP Applications


There are a lot of STMicroelectronics
STBV45G-AP applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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