STBV32G
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- Mfr.Part #
- STBV32G
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 400V 1.5A TO92-3
- Stock
- 7,827
- In Stock ：
- 7,827
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500mA, 1.5A
- JESD-30 Code :
- O-PBCY-T3
- Max Power Dissipation :
- 1.5W
- Base Part Number :
- STBV32
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 5 @ 1A 2V
- Terminal Position :
- BOTTOM
- Current - Collector Cutoff (Max) :
- 1mA
- Number of Terminations :
- 3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 400V
- Emitter Base Voltage (VEBO) :
- 9V
- Transistor Type :
- NPN
- Max Collector Current :
- 1.5A
- Number of Elements :
- 1
- Mount :
- Through Hole
- Packaging :
- Bulk
- Terminal Finish :
- Matte Tin (Sn)
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Power Dissipation :
- 1.5W
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 1.5V
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- Not Qualified
- Continuous Collector Current :
- 1.5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 20
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Datasheets
- STBV32G
,TO-226_straightlead.jpg)
NPN 150°C TJ 1mA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
STBV32G Overview
This device has a DC current gain of 5 @ 1A 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 1.5A is necessary for high efficiency.The base voltage of the emitter can be kept at 9V to achieve high efficiency.The maximum collector current is 1.5A volts.
STBV32G Features
the DC current gain for this device is 5 @ 1A 2V
the vce saturation(Max) is 1.5V @ 500mA, 1.5A
the emitter base voltage is kept at 9V
STBV32G Applications
There are a lot of STMicroelectronics
STBV32G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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