STB5NK52ZD-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Base Part Number :

STB5N

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

16.9nC @ 10V

Rise Time :

13.6ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

30V

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

170 mJ

Transistor Element Material :

SILICON

Fall Time (Typ) :

15 ns

Current - Continuous Drain (Id) @ 25°C :

4.4A Tc

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Pulsed Drain Current-Max (IDM) :

17.6A

Turn-Off Delay Time :

23.1 ns

Number of Terminations :

3

Element Configuration :

Single

Packaging :

Tube

Mount :

Through Hole

Drain to Source Breakdown Voltage :

520V

Series :

SuperMESH™

Power Dissipation-Max :

70W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Reach Compliance Code :

Unknown

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 2.2A, 10V

FET Type :

N-Channel

Number of Elements :

1

Additional Feature :

AVALANCHE RATED

Power Dissipation :

70W

Continuous Drain Current (ID) :

4.4A

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

529pF @ 25V