STB5N62K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Power Dissipation-Max :

70W Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Fall Time (Typ) :

21 ns

Number of Terminations :

2

Vgs (Max) :

±30V

Drain to Source Breakdown Voltage :

620V

Continuous Drain Current (ID) :

4.2A

Series :

SuperMESH3™

Base Part Number :

STB5N

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 50V

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Lead Free :

Lead Free

Pin Count :

4

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn) - annealed

Mounting Type :

Surface Mount

Turn-Off Delay Time :

40 ns

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 2.1A, 10V

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

4.2A Tc

Gate to Source Voltage (Vgs) :

30V

Terminal Form :

Gull wing

Rise Time :

8ns

Threshold Voltage :

3.75V

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Radiation Hardening :

No

Power Dissipation :

70W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

3.75 V

Turn On Delay Time :

12 ns

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

245

Resistance :

1.6Ohm

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Additional Feature :

ULTRA LOW-ON RESISTANCE

FET Type :

N-Channel

Element Configuration :

Single