STB50NE10T4
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- Mfr.Part #
- STB50NE10T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 50A D2PAK
- Stock
- 42,886
- In Stock ：
- 42,886
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Base Part Number :
- STB50N
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 50A
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 45 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain-source On Resistance-Max :
- 0.027Ohm
- JESD-609 Code :
- e3
- Rise Time :
- 100ns
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Series :
- STripFET™
- Power Dissipation-Max :
- 180W Tc
- Number of Terminations :
- 2
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Terminal Finish :
- Matte Tin (Sn)
- Drain to Source Breakdown Voltage :
- 100V
- Pulsed Drain Current-Max (IDM) :
- 200A
- Terminal Form :
- Gull wing
- Current Rating :
- 50A
- Fall Time (Typ) :
- 35 ns
- Pbfree Code :
- No
- Voltage - Rated DC :
- 100V
- Pin Count :
- 3
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 27m Ω @ 25A, 10V
- Lead Free :
- Lead Free
- Operating Temperature :
- -65°C~175°C TJ
- JESD-30 Code :
- R-PSSO-G2
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Packaging :
- Tape and Reel (TR)
- Reach Compliance Code :
- not_compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 166nC @ 10V
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 6000pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Power Dissipation :
- 180W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- STB50NE10T4
N-Channel Tape & Reel (TR) 27m Ω @ 25A, 10V ±20V 6000pF @ 25V 166nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB50NE10T4 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 300 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6000pF @ 25V.This device conducts a continuous drain current (ID) of 50A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 45 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 200A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STB50NE10T4 Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 200A.
STB50NE10T4 Applications
There are a lot of STMicroelectronics
STB50NE10T4 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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