STB50N25M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

14A

Turn-Off Delay Time :

35 ns

Series :

MDmesh™ V

ECCN Code :

EAR99

Pin Count :

4

Terminal Position :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Mount :

Surface Mount

Base Part Number :

STB50N

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

250V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

5V @ 100µA

Pbfree Code :

yes

Power Dissipation-Max :

110W Tc

Power Dissipation :

110W

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Resistance :

65mOhm

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Gate to Source Voltage (Vgs) :

25V

Terminal Form :

Gull wing

Width :

10.4mm

Peak Reflow Temperature (Cel) :

245

Nominal Vgs :

4 V

Dual Supply Voltage :

250V

Fall Time (Typ) :

20 ns

Rise Time :

44ns

Termination :

SMD/SMT

JESD-609 Code :

e3

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

28A

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

65m Ω @ 14A, 10V

Height :

4.6mm

Vgs (Max) :

±25V

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 50V

Turn On Delay Time :

16 ns

Threshold Voltage :

4V

Radiation Hardening :

No

Lead Free :

Lead Free

Number of Pins :

3

Transistor Application :

SWITCHING

Length :

10.75mm

Terminal Finish :

Matte Tin (Sn) - annealed