STB57N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

15ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Avalanche Energy Rating (Eas) :

960 mJ

Number of Elements :

1

Threshold Voltage :

4V

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 100V

Length :

10.4mm

Power Dissipation :

250W

Width :

9.35mm

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Factory Lead Time :

17 Weeks

FET Type :

N-Channel

Fall Time (Typ) :

19 ns

Number of Pins :

3

Transistor Element Material :

SILICON

Base Part Number :

STB57N

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

250W Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

30

Turn On Delay Time :

73 ns

Manufacturer Package Identifier :

D2PAK-0079457

Terminal Form :

THROUGH-HOLE

Turn-Off Delay Time :

12 ns

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

63m Ω @ 21A, 10V

Series :

MDmesh™ V

Drain to Source Breakdown Voltage :

650V

Case Connection :

DRAIN

Mount :

Surface Mount

JESD-609 Code :

e3

Element Configuration :

Single

JEDEC-95 Code :

TO-220AB

Resistance :

63mOhm

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

25V

Number of Channels :

1

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Operating Temperature :

150°C TJ

Number of Terminations :

3

Continuous Drain Current (ID) :

42A

Height :

4.83mm

Peak Reflow Temperature (Cel) :

245

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn) - annealed

Max Junction Temperature (Tj) :

150°C

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Vgs (Max) :

±25V