STB28N65M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Operating Temperature :

150°C TJ

Avalanche Energy Rating (Eas) :

760 mJ

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Series :

MDmesh™ M2

Input Capacitance (Ciss) (Max) @ Vds :

1440pF @ 100V

Number of Terminations :

2

Width :

9.35mm

Factory Lead Time :

26 Weeks

ECCN Code :

EAR99

Height :

4.6mm

Turn-Off Delay Time :

59 ns

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

650V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 250µA

HTS Code :

8541.29.00.95

Turn On Delay Time :

13.4 ns

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

650V

FET Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

20A

Power Dissipation-Max :

170W Tc

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

STB28N

Drain-source On Resistance-Max :

0.18ohm

Gate to Source Voltage (Vgs) :

25V

Pulsed Drain Current-Max (IDM) :

80A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Packaging :

Cut Tape (CT)

Length :

10.4mm

Rds On (Max) @ Id, Vgs :

180m Ω @ 10A, 10V

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Vgs (Max) :

±25V